FDMC5614P mosfet equivalent, p-channel mosfet.
* Max rDS(on) = 100 mW at VGS = −10 V, ID = −5.7 A
* Max rDS(on) = 135 mW at VGS = −4.5 V, ID = −4.4 A
* Low Gate Charge
* Fast Switching Speed
* High.
requiring a wide range of gate drive voltage ratings (4.5 V − 20 V).
Features
* Max rDS(on) = 100 mW at VGS = −10 V,.
This P−Channel MOSFET is a rugged gate version of onsemi’s
advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5 V − 20 V).
Features
* Max rDS(on) = 100 mW .
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